High-power and high-speed characteristics of modified heterostructure IRED's

A modified heterostucture Ga
1-x
Al
x
As near infrared emitting diode is described with single (SH) and double heterostructures (DH) adopted for carrier confinement. The active region is arranged in a layer for best crystal quality as shown by photoluminescence measurement. The maximum 3-dB bandwidth is 175 MHz and optical output power reaches 7 mW in a surface emitting diode. The experimental results are compared with optical characteristics for SH and DH IRED's.