Submicron gate MOSFET's with channel-doped separate gate structures (SG-MOSFET's)

Submicron gate MOSFET's with a new device structure are presented. The device features gate separation between the source and gate and between the gate and drain. The minimum gate length limited by V
TH
lowering is extended into the submicron range. Experimental results showed pentode-like current-voltage characteristics without punchthtough, even in the submicron range. Experimental results of inverter circuits and theoretical analysis predict high-speed operation in the subnanosecond region.