Analysis of the switching speed of a submicrometer-gate CMOS/SOS inverter

The speed of a short-channel CMOS/SOS inverter circuit can be predicted with the use of a simple analytical model. Transistor switching times and stage charging times are assumed to contribute independently to the total propagation delay. The analysis is shown to represent accurately the behavior of 1.5- and 0.9-µm-gate CMOS/SOS ring oscillators.