Avalanche response time in GaAs as determined from microwave admittance measurements

Microwave admittance measurements in a high power GaAs double-drift Read diode are fitted to an analytical solution to the Read equation. The data can be explained within experimental error by the classical expression for intrinsic avalanche time
\tau_{i} = l_{a}/3v_{S}
. This is at variance with the prediction that τ
i
in GaAs may be anomalously long.