High-efficiency stripe-geometry InGaAsP DH lasers (λ = 1.3 µm) with chemically-etched mirrors

Stripe-geometry InGaAsP double heterojunction lasers with chemically-etched mirrors have been fabricated. External differential quantum efficiencies as high as ∼ 30% have been obtained for devices with two chemically-etched mirrors. Etched-mirror lasers with 25 µm wide stripes have threshold currents as low as 210mA (room-temperature, pulsed). The etched-mirror lasers are compared to cleaved-mirror devices prepared from the same wafer.