Nb/GaAs super-Schottky diode

A super-Schottky contact diode made of Nb on heavily doped p-GaAs has been fabricated by electron-beam deposition under high vacuum, resulting in a rugged device having very reliable characteristics with detector current sensitivity S ≃ 1500 V
^-1
and estimated NEP ≃ 1.2 × 10
^-15
W/√HZ at 4.2 K under the optimum bias conditions.