Evidence of space-charge-limited current in amorphous silicon Schottky diodes

Palladium/amorphous silicon (a-SiH
x
) Schottky barrier diodes have been found to exhibit superlinear dark forward current-voltage (I-V) characteristics over the temperature range 30 to 130°C. The results are consistent with expected behavior for space-charge-limited current in the presence of distributed traps. The trap parameters are deduced from I-V data.