Double heterostructure Ga0.47In0.53As MESFETs with submicron gates

MESFETs with GA
0.47
In
0.53
As active channel grown by MBE on InP substrates were successfully fabricated. Thin layers of MBE grown Al
0.48
In
0.52
As seperated both the single crystal aluminum gate from the active channel and the active channel from the InP substrate so raising the Schottky barrier height of the gate and confining the electrons to the channel. The MESFETs with 0.6µm long gates and gate-to-source separations of 0.8 um exhibited an average g
m
of 135 mS mm
^-1
of gate width for V
ds
= 2V and V
g
= 0. This is higher than that reported for GaAs MESFETs with a similar geometry in spite of the intermediate layer between the gate metal and the active layer.