Charges at a laser-recrystallized-polycrystalline-silicon/insulator interface

Capacitance-voltage characteristics have been measured to determine the interface properties at the back surface of a layer of laser-recrystallized polycrystalline silicon. The interface between the recrystallized poly-silicon and an underlying oxide layer can be characterized by an effective fixed-charge density and a fast-state density, both in the low-to-middle-10
¹¹
cm
^-2
range. Charge trapping at a polysilicon/silicon-nitride interface precludes the determination of a meaningful value of interface charge.