A comparative study of methods of measuring carrier lifetime in p-i-n devices

The main methods of measuring lifetime in p-i-n diodes are reviewed. This is done by comparing, first, the experimental results they provide on a series of gold-diffused rectifiers and, second, the numerical results obtained by a simultaneous solution, for the experimental condition used, of the carrier-transport equations into the device and the equations of the electrical circuit. This comparison allows the pointing out of the physical origin of the limitations of the methods studied, and also illustrates the usefulness of the OCVD method which appears to be simple and accurate at the same time.