The effects of storage time variations on the forward resistance of silicon p+-n-n+diodes at microwave frequencies

Minority-carrier storage times in p
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-n-n
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diodes have been measured over a wide range of diode diameters and forward currents. The reduction of the storage time by surface recombination and by high-level charge injection has been observed. By increasing the diode diameter, a significant increase in the storage time is achievable. The decrease in storage times at high injection levels explains the dependence of the diode's forward resistance upon forward drive at microwave frequencies.