A W-band monolithic pseudomorphic InGaAs HEMT downconverter

The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on an InGaAs pseudomorphic high-electron-mobility transistor (PHEMT) are presented. The downconverter consists of a two-stage low-noise amplifier (LNA) and a singly balanced HEMT gate diode mixer. Measured results of the complete downconverter show a conversion gain of 5.3 dB and a noise figure of 6.8 dB at 94 GHz. The whole downconverter is a first pass design and has a high circuit yield. Furthermore, this is the first reported monolithic downconverter in the W-band frequency range, and represents the state-of-the-art in monolithic millimeter-wave technology.<
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