OXIL, a versatile bipolar VLSI technology

A bipolar VLSI technology, for Oxide Isolated Logic (OXIL) circuits has been developed which combines high-frequency conventional down-transistors with inverted up-transistors which are fabricated in a common process on the same chip site. The up-transistor is especially designed to optimize I
²
L circuits for high packing density, speed, and performance. High-pressure-steam oxide isolation and an up-diffused active base are combined to fabricate the up-transistor with
f_{t} > 500
MHz and
beta = 100
, which allows I
²
L delays down to 3 ns at
FO = 1
and 7 ns at
FO = 6
. The down-transistor is an oxide-isolated implanted-base transistor with an As emitter. It exhibits gains of 100-150 at
f_{t} = 2
GHz and supports subnanosecond CML, high-current buffer circuitry, and linear interfacing.