Integrated injection logic for VLSI

This study shows that reducing the basewidth of I
²
L structures improves the intrinsic β
ui
but improvements in the extrinsic β
ue
and the delay times at low-current levels are less significant while high-current performance is degraded. Narrowing the epi region improves both β
ui
and β
ue
and the delay times at high currents, but degrades injection region efficiency λ, and delay times at low currents.