Modeling the influence of carrier profiles on MESFET characteristics

Continuing development of materials methods and the need to improve MESFET device performance calls for accurate modeling of the effect of free-carrier profiles upon MESFET performance. A computer program known as SATVO is described which provides, by means of a numerical solution, saturation characteristics and gate-electrode capacitances for devices of specified geometry fabricated from layers of any profile which may be specified by either Gaussian expressions (as for ion-implanted layers) or by piecewise-linear descriptions. Examples of the use of this program are also provided.