Diffusion profiling using the graded C(V) method

A simple and quick technique for determination of impurity-diffusion profiles in semiconductors from MOS
C(V)
measurements on a gradually etched surface is presented and analyzed, This technique is most useful for slowly varying profiles in the range of 10
¹⁶
-5 × 10
¹⁸
cm
^-3
. Experimental profiles are given for P in Si, and for Cd in InSb.