Temperature behavior of ion-implanted ZnTe green LED's

Ion implantation in ZnTe has been used for fabricating a metal-insulator-semiconductor (MIS) injection device. These diodes present a double-injection behavior with a negative resistance at the injection threshold. In forward bias, a narrow (<80-Å) green (5500-Å) electroluminescence is produced. Diode brightness per unit current density is in the range of 300 cd . m
^-2
/A . cm
^-2
and varies linearly with the injected current in the case of efficient phosphorus-doped ZnTe. These characteristics are studied in the temperature range of -100°C to +100°C so as to determine the fundamental properties of the diodes.