Noise in triode-like JFET's

Drain noise measurements on the triode-like JFET show that the limiting noise of this device is thermal noise. We find
I_{eq} = (2kT/q) \alpha g_{m}
, where α is less than 2, which is smaller than in a vacuum triode. This device is, therefore, a low-noise device. The gate noise and the correlation susceptance were also measured. A theoretical analysis was carried out with a one-dimensional SCL current. The measured results agreed reasonably well with the theory. A two-dimensional analysis should be carried out in detail.