Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit model

The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zinc-doped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward
I-V
characteristics are compared with experimental
I-V
over a wide range of temperatures, showing excellent agreement.