On the theory of thin-film MIS capacitances

Equivalent circuits are presented for the description of thin-film MIS capacitances of wide and small bandgap thin-film semiconductors, operated in depletion and inversion. Special attention is paid to InSb and CdSe MIS capacitances. The possible influence of bulk traps in these semiconductors is taken into account. It is found that the inversion layer of InSb has a time constant of the order of the minority carrier life time, while the time constant of the CdSe inversion layer is so large that an inversion layer in CdSe will probably never occur.