An improved GAMBIT device structure

An improved device structure is presented for the gate modulated bipolar transistor (GAMBIT). By forming vertical walled collector regions, the GAMBIT voltage-controlled negative-resistance characteristic has been made to occur at low collector voltages without the presence of the threshold voltage observed for the planar diffused devices. The negative resistance of these devices varies exponentially with the reciprocal of the gate bias and increases with collector depth as expected from analysis.