Large-signal analysis of Lo-Hi-Lo double-drift silicon IMPATT diodes at 50 GHz

Large-signal analysis of a lo-hi-lo double-drift silicon IMPATT diode at 50 GHz shows that the device is capable of output power of 1.1 W and efficiency of 20 percent for a device area of 2 × 10
^-5
cm
²
at a dc biasing current density of 12 kA/cm
²
and ac voltage amplitude of 12 V. It is also found that, both output power values and efficiencies decrease with increasing enhanced leakage current.