A high cutoff frequency planar Schottky diode with a stripe geometry junction

Design and experimental results of a planar Schottky-barrier diode suitable for use in MIC's are presented. The Schottky junction has a stripe geometry with a closely located ohmic contact. This geometry is effective in reducing the skin-effect parasitic resistance to yield a high cutoff frequency. The experimental diode has been fabricated using n and n
⁺
GaAs layers selectively grown on a semi-insulating substrate. A zero-bias cutoff frequency of more than 700 GHz has been obtained.