Reduction in minority carrier storage effect by fluorine ion implantation damage

Damage is produced in p-n diodes by fluorine ion implantation to reduce minority carrier storage effect. The switching time, reverse leakage current, and
I-V
characteristics were investigated for annealing temperature between 450°C and 650°C. The accelation energy is 130 keV and doses are 10
¹³
-10
¹⁵
/cm
²
. Annealing causes restoration in switching time, but leakage current increases with annealing temperature rise for doses more than 1 × 10
¹⁴
/cm
²
. The best diodes indicate 1.5-order reduction in switching time and 10 nA in reverse leakage current. These properties, caused by implantation damage, are retained after long-cycle annealing at 450°C and are expected to be stable under practical use. These diodes can be obtained by annealing at 450°C and they furnish satisfactory diode performance.