On the compatibility of X-ray lithography and SOS device fabrication

If X-ray lithography is applied to the fabrication of silicon-on-sapphire devices (SOS), the average radiation absorbed dose in the sapphire at the silicon-sapphire interface is in excess of ten Mrad. Recent experiments indicate that the resulting radiation damage may not be easily annealed. These results suggest that X-ray lithography and SOS may not be compatible technologies.