Si-controlled avalanche logic

It is proposed that a new integrated-circuit logic system, based on the controlled avalanche mechanism in Si, be developed to meet high speed data processing needs in the multigigabit rate range. A brief discussion of the "controlled avalanche" mechanism is given, and past experimental results with "controlled avalanche transit-time triodes" are cited. The role of avalanche multiplication in increasing the speed over a transistor of the same dimensions is explained. A short drift length "controlled avalanche transistor" (CAT) could be developed to increase the speed of Si logic beyond the present limited capability. To fully exploit the avalanche mechanism, new circuit configurations are proposed which are comprised of CAT's and avalanche diodes to function as NOR, NAND, and INVERT gates. Moreover, a latching action can be obtained in the CAT by means of the return hole mechanism and the device becomes an avalanche memory triode (AMT). Such AMT's are natural devices for shift-register circuits and random-access memory applications. The controlled avalanche logic family of devices, therefore, contains all necessary building blocks for a fast data handling system. It is estimated that a data rate of the order of gigabits per second with a P. t product of the order 10
^-12
J is possible. Experimental results on discrete devices are presented to demonstrate the switching, memory, and transfer capabilities of the device.