New TiOx-MIS and Si02-MIS silicon solar cells

Two new types of solar cells are described in which either a TiO
x
or a SiO
2
layer is deposited onto p silicon; contacts are obtained by means of a MIS tunnel diode grid. It is shown that the TiO
x
-MIS cells can be realized by single-mask completely low-temperature processing by employing spin-on of titanium-oxide antireflective coating. Conversion efficiencies of 8 percent at AM1 have been achieved with these cells; they perform even more efficiently at higher illumination levels. With the SiO
2
-MIS cells efficiencies of 12 percent have been reached, at the expense of a slightly more complicated process. A detailed comparison between the two cells is given.