Time-delay-and-integration charge-coupled devices using tin oxide gate technology

A time-delay-and-integration (TDI) CCD area array organized into two sections of 10 by 9 integration stages has been designed, built, and tested. The device uses four-phase buried channel construction and provides 65-percent quantum efficiency with smooth spectral response by front surface imaging through transparent doped tin oxide gates. TDI operation with forward and reverse scan clocking for bi-directional image motion has been demonstrated, with the 10 input parallel-in/serial-out output shift register operating at 1.25-MHz video rate.