X-Band high burnout resistance Schottky-barrier diodes

An investigation of high burnout resistant Schottky-barrier diodes for
X
-band frequencies is presented. These diodes exhibit pulse RF burnout capability greater than 100 W (τ = 3 ns, 10
³
pulses/s) and CW burnout capability of 5 W, which is a two to five times better performance than most Schottky-barrier diodes manufactured today. The diodes also exhibit nearly ideal electrical characteristics and low noise figures. The failure analysis of these devices under CW power and pulsed RF power (τ ≃ 3 ns) is also discussed.