Characteristics of the Gallium-doped infrared sensing MOSFET (IRFET)

Gallium-doped infrared sensing MOSFET's have been operated in the far infrared, 8- to 14-µm wavelength region with a quantum efficiency of 2.8 percent and a responsivity of 3.5 × 10
³
A/J. A strong field enhancement has been observed in both thermal and optical emission of holes from the neutral gallium center in silicon. Application considerations in large-scale infrared imaging arrays are discussed.