Auger analysis of CdS—CuInSe2thin-film solar cells

CdS-CuInSe
2
thin-film solar cells are examined by Auger electron spectroscopy The effects of device fabrication and post-deposition procedures on the depth-compositional profiles and the performance of these photovoltaic devices are presented. The temperature dependence of the grain boundary diffusion coefficient of Cd from the CdS layer into the CuInSe
2
film is determined experimentally.