The buried oxide MOSFET—A new type of high-speed switching device

A MOSFET of novel structure is proposed, which has a potential advantage on its switching speed. The new structure is similar to that of SOS-MOS which essentially eliminates the junction capacitance of the MOSFET. This structure is fabricated by simultaneous deposition of single and polycrystalline silicon over silicon with selective oxidations already in place. The fabrication process and dc characteristics of the new devices are described. The speed-power characteristics are also evaluated by computer simulations.