Characterization of current transport of narrow-base bipolar transistors by the regional approach

It is demonstrated that the I
c
-V
BE
transport characteristics of a narrow-base bipolar transistor can be accurately computed using the regional approach if an appropriate characterization of the effects of mobile carriers in the emitter space-charge region is employed, but that neglect of such effects can lead to serious errors. A new method of approximate analysis for a linearly graded p-n junction is utilized for this purpose, giving results that are in close agreement with those of full computer simulation of the device structure.