A 64-kbit block addressed charge-coupled memory

This paper describes the design and performance of a 64-kbit (65 536 bits) block addressed charge-coupled serial memory. By using the offset-mask charge-coupled device (CCD) electrode structure to obtain a small cell size, and an adaptive system approach to utilize nonzero defect memory chips, the system cost per bit of charge-coupled serial memory can be reduced to provide a solid-state replacement of moving magnetic memories and to bridge the gap between high cost random access memories (RAM's) and slow access magnetic memories. The memory chip is organized as 64K words by 1 bit in 16 blocks of 4 kbits. Each 4-kbit block is organized as a serial-parallel-serial (SPS) array. The chip is fully decoded with write/recirculate control and two-dimensional decoding to permit memory matrix organization with X-Y chip select control. All inputs and the ouput are TTL compatible. Operated at a data rate of 1 MHz, the mean access time is about 2 ms and the average power dissipation is 1 µW/bit. The maximum output data rate is 10 MHz, giving a mean access time of about 200 µs, and an average power dissipation of 10 µW/bit. The memory chip is fabricated using an n-channel polysilicon gate process. Using tolerant design rules (8-µm minimum feature size and ±2-µm alignment tolerance) the CCD cell size is 0.4 mil
²
and the total chip size is 218 × 235 mil
²
. The chip is mounted in a 22-pin 400-mil wide ceramic dual in-line package.