p-Channel MOS transistor in indium antimonide

A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO
2
, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of -3 V and an effective hole mobility of 330 cm
²
. V
^-1
.s
^-1
.