Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure

A series of experiments have been done in which the properties of GaP grown by liquid phase epitaxy (LPE) have been varied by providing an additional source of phosphorus via the vapor phase. The quality of the crystals, as judged from gross defect features observed in etched cross sections, is a function of the amount of phosphorus added to the vapor phase.