Capacitive probe measurements of dipole domains in InP

The capacitive probe used in the past to study the behavior of high-field dipole domains in GaAs is analyzed in detail in order to assess the amount of signal distortion it produces when recording a moving surface potential variation. The results obtained are used to interpret dipole domain measurements in InP. A velocity-field curve for InP between 60 and 160 kV/cm is derived together with information on the variation of the domain shape, domain velocity, peak field, and depletion ratio for different excess domain voltages.