A computer simulation scheme for various solid-state devices

The main computational scheme for the determination of the device-circuit interaction and the internal dynamics of the solid-state device are described. Certain important details are separately discussed in Appendixes. A unique feature in the simulation is the boundary condition at the electrode, characterized here by an energy barrier. Formulated in this way, successful simulations of the Gunn diode, injection-controlled amplifier, IMPATT diode, TRAPATT condition, controlled-avalanche transit-time (CATT) triode, as well as other phenomena reported in the literature, have been demonstrated.