Optimum transit angles of millimeter-wave Si IMPATT diodes

Optimum transit angles for maximum output power in the millimeter-wave IMPATT diodes are calculated analytically by considering the carrier diffusion process through the space-charge region. It is found that the optimum transit angle decreases, as the space-charge layer width reduces. The theoretical results show satisfactory agreement with the previously published experimental results for Si p
⁺
-n-n
⁺
abrupt junction diodes.