Si UHF MOS high-power FET

An n-channel depletion-type Si UHF MOS power FET has been developed which exhibits 16.4-W output power, 6.1-dB power gain, and 35-percent drain efficiency at 700 MHz. The island-like n
⁺
source, interdigitated 5-µm-long and 20-mm-wide gate, and n
⁺
drain were fabricated in p on p
⁺
epitaxial wafer.