The breakdown voltage of double-sided p-n junctions

The avalanche breakdown voltage of an abrupt double-sided junction is a function only of N
eff
(the doping obtained from capacitance-voltage analysis) in a material in which the ionization rates for electrons and holes are equal or maintain a constant ratio. This doping parameter, together with the published breakdown voltage data for single-sided junctions, immediately gives the breakdown voltage of the more complex structure.