Quenched-domain mode admittance model for transferred-electron devices

The quenched-domain mode computer simulation for transferred-electron (TE) devices developed by Khandelwal and Curtice has been run for a variety of conditions and the resulting device admittance as a function of bias and RF voltages has been found to be satisfactorily approximated by closed-form expressions. These functional approximations are described and have been used to generate smooth data suitable for calculation of oscillator noise properties as outlined by Sweet. These functional forms could also be useful for other studies of TE device properties such as tuning and amplitude and frequency modulation.