Effect of donor density and temperature on the performance of stabilized transferred-electron devices

A large-signal analysis is used to discuss the effect of lattice temperature and temperature gradients on the RF behavior of stabilized transferred-electron devices. The influence of the value of donor density and density gradients upon RF conversion efficiency is also discussed. It is shown that efficiency can be improved if either the heat sink is located at the anode or the donor density is increased near the anode end.