Effects of lateral surface generation on the MOS-C linear-sweep and C-t transient characteristics

Observed effects of lateral surface generation on the MOS-C C-t transient and linear-sweep C-V
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characteristics are noted and explained in terms of a qualitative model that emphasizes the heretofore ignored role of outer oxide surface ions. It is suggested that the lateral generation component is functionally more complex than previously conceived, and that this fact can lead to erroneous conclusions in the interpretation of deep depletion data.