GaAsP VLED's by Zn-ion implantation

The feasibility of fabricating visible-light emitting diodes (VLED's) by ion implantation has been investigated. Zn-ions at 20-40 kev energy were implanted into Te-doped GaAs
06
P
0.4
epitaxial layers on GaAs substrates with ion doses ranging from
1 \times 10^{14}
to
1 \times 10^{16}
ions/cm
²
. Details of the diode fabrication process will be given, together with the characteristics of the finished devices, as well as resistivity, mobility, and photoluminescence data of the implanted layers as a function of the annealing and implantation parameters.