Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodes

Vapor-grown p-n junctions of In
x
Ga
1-x
As have been prepared that emit near-bandgap infrared radiation at 1.06 µm with an external quantum efficiency in excess of 1 percent at room temperature. These diodes have an electroluminescence response time of 20 ns. In addition, In
x
Ga
1-x
As injection lasers have been fabricated with threshold current densities between 2000 and 3000 A/cm
²
at 80 K. The importance of internal absorption losses in determining the spectral distribution and the electroluminescence efficiency at room temperature is described.