Effect of magnetic field on the performance of millimeter-wave detectors using bulk InSb

The performance of microwave-biased millimeter-wave detectors using bulk InSb in the presence of a magnetic field is described. Broad-band transitions between the impurity and conduction bands together with free-carrier absorption are responsible for the detection mechanism. The performance of the device is examined as a function of the magnetic field, millimeter-wave signal, and microwave bias levels. The results show that the performance can be improved by proper choice of the magnetic field.