Bulk and optical generation parameters measured with the pulsed MOS capacitor

Theory and experiments are presented for the pulsed MOS capacitor when carrier generation is constant. This condition obtains when quasi-neutral bulk-region generation dominates over that in the space-charge region or when generation is due to an external excitation mechanism. It is shown how the diffusion length, surface generation velocity, and external flux can be obtained from the pulsed
C-i
response. This extends the usefulness of the pulsed MOS-C to narrow-gap semiconductors, such as germanium, as well as to optical generation measurements.