Determination of deep levels in semiconductors from C-V measurements

A method is presented that allows deep level density and energy of impurities in semiconductors to be routinely determined from simple
C-V
measurements of Schottky barriers. The method is particularly useful for material having levels with very long time constants that are not accessible by noise spectra measurements. The technique is illustrated by measurements of epitaxial n-GaAs which show a donor level at 0.83 eV below the conduction band.