MOS-Bipolar monolithic integrated circuit technology

A technique is described that makes possible the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics, p-channel MOS transistors with
V_{T} = 1.7
volts, g
m
= 1000 µmhos, and
BV_{DS} = 35
volts for
W/L
= 60 and t
ox
= 1000 Å have been fabricated with bipolar transistors having
B = 100, f_{t} = 500
MHz and
BV_{CEO} = 50
V.